Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland 10.3762/bjnano.12.47 Abstract We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of

• engineering. Keywords: carrier concentration; gallium nitride; graphene; nanowires; Raman spectroscopy; scattering on defects; strain; Introduction The combination of excellent electrical and mechanical properties with interesting physical phenomena occurring in two-dimensional structures makes graphene an

• graphene deposited on gallium nitride nanowires (GaN NWs) with different variations in height. The electric field induced in GaN predicted by theoretical calculations could reach 5 MV/cm [21]. This is an effect of high spontaneous and piezoelectric polarisations in the wurtzite structure of GaN

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• , Spain 10.3762/bjnano.11.4 Abstract Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The

• ) has become the basis of modern energy-efficient lighting technology over the last 30 years [1]. Especially the binary III–V semiconductor gallium nitride (GaN) is very useful for consumer lighting application. The high band gap energy of 3.4 eV at room temperature permits the production of blue and

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• concentration in the nanostructures exceeds 5∙1019 cm−3. Keywords: A3B5 on Si; epitaxy; GaN; MBE; nanowires; nanotubes; nanotube-like nanostructures; Si; Introduction Gallium nitride quasi-one-dimensional nanostructures such as nanowires (NWs) and nanotubes (NTs) synthesized by means of plasma-assisted

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• Moldova 10.3762/bjnano.7.124 Abstract Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle–cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• induced by the implantation of rare gas atoms. The latter has been observed among other for gallium nitride [28], silicon [29], iron [30] or steel [31], and tungsten [32] under helium irradiation. The evolution of roughness for Ne+ irradiation of PMMA can be better seen in Figure 2a where the value of RMS

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• with experiments. Keywords: finite elements; gallium nitride; indentation; mechanical properties; molecular dynamics; nanostructures; Introduction Recently developed scanning probe-based techniques, such as contact resonance atomic force microscopy (CR-AFM) [1][2], allow for the assessment of

• more advanced surface features, including steps, are unclear at this point. The present work addresses the mechanical behavior around a gallium nitride (GaN) step employing a combination of classical molecular dynamics (MD) simulations with a finite element (FEM) approach and CR-AFM experiments. GaN is

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

• Patrik Rath,
• Svetlana Khasminskaya,
• Christoph Nebel,
• Christoph Wild and
• Wolfram H.P. Pernice

Beilstein J. Nanotechnol. 2013, 4, 300–305, doi:10.3762/bjnano.4.33

• various options, group-III/IV nitride semiconductors, such as silicon nitride (≈5 eV), gallium nitride (3.37 eV) and aluminium nitride (AlN, 6.14 eV), have been investigated [11][12][13]. Because of their larger bandgap, these materials allow for waveguiding throughout the visible spectrum and do not

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• octadecyltrimethoxy silane (ODTMS) SAM on n-type GaN was attributed to a direct mechanism involving electron transfer from the HOMO level of the ODTMS to the valence band of the excited GaN [54]. As a consequence of this direct mechanism in gallium nitride, no remote degradation effects were observed on this